N-channel MOSFET, single element configuration, featuring 100V drain-to-source breakdown voltage and 100V drain-to-source voltage (Vdss). Offers a continuous drain current of 2.3A and a maximum on-resistance (Rds On) of 220mΩ. Operates with a gate-to-source voltage (Vgs) up to 20V, exhibiting a 5ns turn-on delay and 9ns fall time. Packaged in a SOT-223-4 surface mount package, supplied on a 4000-piece tape and reel. Maximum power dissipation is 2.7W, with operating temperatures ranging from -55°C to 150°C.
Onsemi IRLM120ATF technical specifications.
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 220mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 440pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.7W |
| Radiation Hardening | No |
| Rds On Max | 220mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.188g |
| RoHS | Compliant |
No datasheet is available for this part.
