The IRLR220ATF is a TO-252 packaged N-channel MOSFET with a drain to source breakdown voltage of 200V and a continuous drain current of 4.6A. It has a power dissipation of 2.5W and a maximum operating temperature of 150°C. The device is RoHS compliant and available in tape and reel packaging with a quantity of 2000 units per reel. The IRLR220ATF is suitable for high-power switching applications.
Onsemi IRLR220ATF technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 800mR |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 24ns |
| RoHS | Compliant |
No datasheet is available for this part.
