The IRLW520ATM is a surface mount N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 100V and a continuous drain current of 9.2A. The device is packaged in a TO-263 case and is available in quantities of 800 per reel. The IRLW520ATM is RoHS compliant and has a power dissipation of 3.8W.
PackageTO-263
MountingSurface Mount
PolarityN-CHANNEL
Power3.8W
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Technical Specifications
Onsemi IRLW520ATM technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 9.2A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 220mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 5ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi IRLW520ATM Datasheet
Download the complete datasheet for Onsemi IRLW520ATM to view detailed technical specifications.
No datasheet is available for this part.