The IRLW530ATM is a TO-263 packaged N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 14A and a drain to source breakdown voltage of 100V. The device features a drain to source resistance of 120mR and a power dissipation of 62W. It is RoHS compliant and available in tape and reel packaging with 800 units per package.
Onsemi IRLW530ATM technical specifications.
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 14A |
| Current Rating | 14A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 120mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 62W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 29ns |
| DC Rated Voltage | 100V |
| RoHS | Compliant |
No datasheet is available for this part.
