The IRLW620ATM is a TO-263 packaged N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 5A and a drain to source breakdown voltage of 200V. The device also features a drain to source resistance of 800mR and a power dissipation of 3.1W. The IRLW620ATM is RoHS compliant and available in tape and reel packaging.
PackageTO-263
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Onsemi IRLW620ATM technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 800mR |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 24ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi IRLW620ATM Datasheet
Download the complete datasheet for Onsemi IRLW620ATM to view detailed technical specifications.
No datasheet is available for this part.