The ISL9N307AP3 is an N-channel MOSFET with a drain to source breakdown voltage of 30V and a continuous drain current of 75A. It features a drain to source resistance of 11.5mR and a gate to source voltage of 20V. The device is packaged in a TO-220AB package and is RoHS compliant. It operates over a temperature range of -55°C to 175°C and has a power dissipation of 100W.
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| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11.5mR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 60ns |
| RoHS | Compliant |
