
N-channel Insulated Gate Bipolar Transistor (IGBT) chip for automotive applications. Features a 390V Collector Emitter Voltage (VCEO) and a maximum collector current of 21A. Offers a low Collector Emitter Saturation Voltage of 1.9V and a maximum power dissipation of 150W. Packaged in a TO-252AA (DPAK) surface-mount package, this RoHS compliant component operates from -40°C to 175°C.
Onsemi ISL9V3040D3ST technical specifications.
| Package/Case | TO-252AA |
| Collector Emitter Breakdown Voltage | 430V |
| Collector Emitter Saturation Voltage | 1.9V |
| Collector Emitter Voltage (VCEO) | 390V |
| Collector-emitter Voltage-Max | 1.6V |
| Current | 21A |
| Current Rating | 21A |
| Height | 2.39mm |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Breakdown Voltage | 430V |
| Max Collector Current | 21A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Number of Outputs | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | EcoSPARK® |
| Turn-Off Delay Time | 15us |
| Turn-On Delay Time | 4us |
| Voltage | 400V |
| DC Rated Voltage | 400V |
| Weight | 0.009184oz |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi ISL9V3040D3ST to view detailed technical specifications.
No datasheet is available for this part.
