N-channel Insulated Gate Bipolar Transistor (IGBT) for ignition applications, featuring a 400V clamping voltage and 21A continuous collector current. This through-hole component offers a low 1.25V collector-emitter saturation voltage and 1.6V collector-emitter voltage (VCEO). Designed for high-temperature operation up to 175°C, it boasts a 150W power dissipation and is packaged in a TO-220AB case. RoHS compliant and lead-free, this IGBT is supplied in a 400-piece rail/tube.
PackageTO-220AB
Current Rating21A
MountingThrough Hole
Power150W
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Technical Specifications
Onsemi ISL9V3040P3 technical specifications.
General
Package/Case
TO-220AB
Clamping Voltage
400V
Collector Emitter Breakdown Voltage
430V
Collector Emitter Saturation Voltage
1.25V
Collector Emitter Voltage (VCEO)
1.6V
Collector-emitter Voltage-Max
1.6V
Continuous Collector Current
21A
Current Rating
21A
Height
16.3mm
Lead Free
Lead Free
Length
10.67mm
Max Collector Current
21A
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Max Power Dissipation
150W
Mount
Through Hole
Number of Outputs
1
Operating Supply Voltage
400V
Package Quantity
400
Packaging
Rail/Tube
Power Dissipation
150W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
EcoSPARK®
Turn-Off Delay Time
4.8us
Turn-On Delay Time
0.7us
DC Rated Voltage
400V
Weight
1.8g
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi ISL9V3040P3 Datasheet
Download the complete datasheet for Onsemi ISL9V3040P3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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