N-channel Junction Field-Effect Transistor (JFET) designed for through-hole mounting in a TO-92 package. Features a continuous drain current of 5mA, a drain-to-source voltage rating of 35V, and a gate-to-source voltage of -35V. Offers a drain-to-source resistance of 50 Ohms and a maximum power dissipation of 625mW. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-92
Voltage35V
Current Rating50mA
MountingThrough Hole
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Technical Specifications
Onsemi J112 technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 5mA |
| Current Rating | 50mA |
| Drain to Source Resistance | 50R |
| Drain to Source Voltage (Vdss) | 35V |
| Gate to Source Voltage (Vgs) | -35V |
| Height | 5.33mm |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Voltage | 35V |
| DC Rated Voltage | 35V |
| Weight | 0.00709oz |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi J112 Datasheet
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