N-channel RF small signal JFET designed for UHF band applications. Features a 25V drain-source breakdown voltage and 30mA continuous drain current. Operates with a maximum power dissipation of 625mW and offers a gain of 16dB at 100MHz. Packaged in a TO-92 through-hole mount configuration, this component is suitable for a wide temperature range from -55°C to 150°C.
Onsemi J309 technical specifications.
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 30mA |
| Current Rating | 30mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 35R |
| Drain to Source Voltage (Vdss) | 25V |
| Frequency | 100MHz |
| Gain | 16dB |
| Gate to Source Voltage (Vgs) | -25V |
| Height | 5.33mm |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Noise Figure | 3dB |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Termination | Through Hole |
| Test Voltage | 10V |
| Voltage Rating | 25V |
| DC Rated Voltage | 25V |
| Weight | 0.201g |
| Width | 4.19mm |
| RoHS | Not CompliantNo |
Download the complete datasheet for Onsemi J309 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.