N-channel RF MOSFET, TO-92-3 package, featuring 25V drain-to-source breakdown voltage and 60mA continuous drain current. Operates up to 450MHz with a 12dB gain and 3dB noise figure. Rated for 625mW power dissipation, this through-hole component is lead-free and RoHS compliant, with an operating temperature range of -55°C to 150°C.
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| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 60mA |
| Current Rating | 60mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Voltage (Vdss) | 25V |
| Frequency | 450MHz |
| Gain | 12dB |
| Gate to Source Voltage (Vgs) | -25V |
| Height | 5.33mm |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Noise Figure | 3dB |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | N-CHANNEL |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 10V |
| Voltage Rating | 25V |
| DC Rated Voltage | 25V |
| Weight | 0.00709oz |
| Width | 4.19mm |
| RoHS | Compliant |
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