NPN Bipolar Junction Transistor (BJT) designed for small signal applications. Features a maximum collector-emitter voltage of 80V and a continuous collector current of 1A. Offers a minimum DC current gain (hFE) of 50 and a maximum operating frequency of 400MHz. Operates within a temperature range of -65°C to 200°C, with a maximum power dissipation of 500mW. Packaged in a TO-18-3 metal can, supplied in bulk packaging.
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Onsemi JANTX2N3700 technical specifications.
| Package/Case | TO-18-3 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector-emitter Voltage-Max | 80V |
| Continuous Collector Current | 1A |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 50 |
| Lead Free | Contains Lead |
| Max Collector Current | 1A |
| Max Frequency | 400MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Package Quantity | 338 |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
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