The JANTXV2N3637L is a PNP bipolar junction transistor with a collector base voltage of 175V and a maximum collector current of 1A. It is packaged in a TO-5-3 cylindrical case and is rated for a maximum power dissipation of 1W. The transistor operates over a temperature range of -65°C to 200°C and is available in bulk packaging.
PackageTO-5-3
PolarityPNP
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Technical Specifications
Onsemi JANTXV2N3637L technical specifications.
General
| Package/Case | TO-5-3 |
| Collector Base Voltage (VCBO) | 175V |
| Lead Free | Contains Lead |
| Max Collector Current | 1A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Packaging | Bulk |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi JANTXV2N3637L Datasheet
Download the complete datasheet for Onsemi JANTXV2N3637L to view detailed technical specifications.
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