PNP Epitaxial Silicon Transistor, 2000-FNFLD. Features a 50V Collector Emitter Voltage (VCEO) and 80MHz transition frequency. Maximum collector current is 150mA with a minimum hFE of 70. Packaged in a TO-92-3 through-hole mount, this RoHS compliant component operates from -65°C to 125°C with 400mW power dissipation.
Frequency80MHz
PackageTO-92-3
Current Rating-150mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi KSA1015GRTA technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
-50V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
-300mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
300mV
Current Rating
-150mA
Emitter Base Voltage (VEBO)
-5V
Frequency
80MHz
Gain Bandwidth Product
80MHz
Height
5.33mm
hFE Min
70
Lead Free
Lead Free
Length
5.2mm
Max Breakdown Voltage
50V
Max Collector Current
150mA
Max Frequency
1MHz
Max Operating Temperature
125°C
Min Operating Temperature
-65°C
Max Power Dissipation
400mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
PNP
Power Dissipation
400mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
80MHz
DC Rated Voltage
-50V
Weight
0.24g
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi KSA1015GRTA Datasheet
Download the complete datasheet for Onsemi KSA1015GRTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
