PNP Epitaxial Silicon Transistor, 2000-FNFLD. Features a 50V Collector Emitter Voltage (VCEO) and 80MHz transition frequency. Maximum collector current is 150mA with a minimum hFE of 70. Packaged in a TO-92-3 through-hole mount, this RoHS compliant component operates from -65°C to 125°C with 400mW power dissipation.
Frequency80MHz
PackageTO-92-3
Current Rating-150mA
MountingThrough Hole
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Technical Specifications
Onsemi KSA1015GRTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -150mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 80MHz |
| Gain Bandwidth Product | 80MHz |
| Height | 5.33mm |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Frequency | 1MHz |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 80MHz |
| DC Rated Voltage | -50V |
| Weight | 0.24g |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSA1015GRTA Datasheet
Download the complete datasheet for Onsemi KSA1015GRTA to view detailed technical specifications.
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