PNP Bipolar Junction Transistor (BJT) in a TO-220-3 package. Features a maximum collector current of 1.5A and a collector-emitter voltage of 150V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 4MHz. Designed for through-hole mounting with a maximum power dissipation of 20W. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Onsemi KSA1304OTU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | -1.5V |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | -1.5A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 20W |
| RoHS Compliant | Yes |
| Series | KSA1304 |
| Transition Frequency | 4MHz |
| DC Rated Voltage | -150V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSA1304OTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.