PNP Epitaxial Silicon Transistor for through-hole mounting in a TO-92-3 package. Features a collector-emitter voltage of 45V, collector current rating of -200mA, and a minimum hFE of 40. Offers a maximum power dissipation of 400mW and operates within a temperature range of -55°C to 150°C. This component is lead-free, RoHS compliant, and supplied in an ammo pack with a package quantity of 2000.
Onsemi KSA539CYTA technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -45V |
| Weight | 0.24g |
| RoHS | Compliant |
No datasheet is available for this part.
