PNP Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 200mA and a collector-emitter voltage (VCEO) of 45V. Offers a minimum DC current gain (hFE) of 40 and a maximum power dissipation of 400mW. Operates across a wide temperature range from -55°C to 150°C, with a collector-emitter saturation voltage of -250mV. This component is lead-free and RoHS compliant.
Sign in to ask questions about the Onsemi KSA539YBU datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi KSA539YBU technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSA539 |
| DC Rated Voltage | -45V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSA539YBU to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
