PNP Epitaxial Silicon Transistor, 2000-FNFLD, featuring a 120MHz transition frequency and 100 minimum hFE. This through-hole mounted component offers a maximum collector current of 2A and a collector-emitter voltage of 30V. With a power dissipation of 1W and operating temperature range of -55°C to 150°C, it is provided in an Ammo Pack with a TO-226-3 package.
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| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -2V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 2V |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 120MHz |
| Gain Bandwidth Product | 120MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 120MHz |
| DC Rated Voltage | -30V |
| Weight | 0.3711027g |
| RoHS | Compliant |
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