NPN silicon bipolar junction transistor in a TO-92 package, designed for small signal applications. Features a maximum collector current of 700mA and a collector-emitter breakdown voltage of 60V. Offers a transition frequency of 50MHz and a minimum DC current gain (hFE) of 40. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 800mW. Through-hole mounting and RoHS compliant.
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| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 700mA |
| Emitter Base Voltage (VEBO) | 8V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 700mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
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