NPN Epitaxial Silicon Transistor for RF applications. Features a 600MHz transition frequency and 20V collector-emitter breakdown voltage. Continuous collector current rated at 20mA with a maximum power dissipation of 250mW. Housed in a TO-92 package for through-hole mounting. Operates across a wide temperature range from -55°C to 150°C.
Frequency600MHz
PackageTO-92
Current Rating20mA
MountingThrough Hole
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Technical Specifications
Onsemi KSC1674YBU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 20V |
| Continuous Collector Current | 20mA |
| Current Rating | 20mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 600MHz |
| Height | 4.58mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 20mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Operating Frequency | 600 MHz |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 600MHz |
| DC Rated Voltage | 20V |
| Weight | 0.179g |
| Width | 3.86mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC1674YBU Datasheet
Download the complete datasheet for Onsemi KSC1674YBU to view detailed technical specifications.
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