NPN bipolar junction transistor (BJT) in a TO-92 package for through-hole mounting. Features a maximum collector current of 150mA and a collector-emitter breakdown voltage of 50V. Offers a transition frequency of 80MHz and a minimum DC current gain (hFE) of 70. Operates across a temperature range of -55°C to 125°C with a power dissipation of 400mW. This silicon transistor is lead-free and RoHS compliant.
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Onsemi KSC1815YBU technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 100mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 150mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 80MHz |
| Gain Bandwidth Product | 80MHz |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Collector Current | 150mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 80MHz |
| DC Rated Voltage | 50V |
| RoHS | Compliant |
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