NPN Epitaxial Bipolar Junction Transistor (BJT) with a 120V Collector-Emitter Voltage (VCEO) and 50mA Max Collector Current. Features a 110MHz Gain Bandwidth Product and 200 minimum hFE. Packaged in TO-92-3 for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C with 500mW power dissipation.
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| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 70mV |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 110MHz |
| Gain Bandwidth Product | 110MHz |
| Height | 4.58mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 50mA |
| Max Frequency | 110MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 110MHz |
| DC Rated Voltage | 120V |
| Weight | 0.24g |
| Width | 3.86mm |
| RoHS | Compliant |
