NPN Epitaxial Silicon Transistor, 2000-FNFLD. Features 120V Collector-Emitter Voltage (VCEO) and 120V Collector Base Voltage (VCBO). Offers a maximum collector current of 800mA and a transition frequency of 120MHz. Packaged in TO-226-3 with a maximum power dissipation of 900mW. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
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| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 800mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 120MHz |
| Gain Bandwidth Product | 120MHz |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 900mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 120MHz |
| DC Rated Voltage | 120V |
| Weight | 0.3711027g |
| RoHS | Compliant |
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