NPN Epitaxial Silicon Transistor, 2000-FNFLD, featuring a 120MHz transition frequency and 2A maximum collector current. This bipolar junction transistor offers a 30V collector-emitter voltage and a 1W power dissipation. Packaged in a TO-226-3 case with through-hole mounting, it operates from -55°C to 150°C and is RoHS compliant.
Frequency120MHz
PackageTO-226-3
Current Rating2A
MountingThrough Hole
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Technical Specifications
Onsemi KSC2328AOTA technical specifications.
General
Package/Case
TO-226-3
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
2V
Current Rating
2A
Emitter Base Voltage (VEBO)
5V
Frequency
120MHz
Gain Bandwidth Product
120MHz
Height
8mm
hFE Min
100
Lead Free
Lead Free
Length
4.9mm
Max Breakdown Voltage
30V
Max Collector Current
2A
Max Frequency
1MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
RoHS Compliant
Yes
Series
KSC2328
Transition Frequency
120MHz
DC Rated Voltage
30V
Weight
0.3711027g
Width
3.9mm
Compliance
RoHS
Compliant
Datasheet
Onsemi KSC2328AOTA Datasheet
Download the complete datasheet for Onsemi KSC2328AOTA to view detailed technical specifications.
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