
NPN Epitaxial Silicon Transistor, 2000-FNFLD, featuring a 120MHz transition frequency and 2A maximum collector current. This bipolar junction transistor offers a 30V collector-emitter voltage and a 1W power dissipation. Packaged in a TO-226-3 case with through-hole mounting, it operates from -55°C to 150°C and is RoHS compliant.
Onsemi KSC2328AOTA technical specifications.
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 2V |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 120MHz |
| Gain Bandwidth Product | 120MHz |
| Height | 8mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 2A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSC2328 |
| Transition Frequency | 120MHz |
| DC Rated Voltage | 30V |
| Weight | 0.3711027g |
| Width | 3.9mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSC2328AOTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.