NPN Epitaxial Silicon Transistor, 2000-FNFLD, featuring a 30V Collector Emitter Voltage (VCEO) and a 2A Max Collector Current. This bipolar junction transistor (BJT) offers a 120MHz transition frequency and a minimum hFE of 100. Packaged in a TO-92 case for through-hole mounting, it operates within a temperature range of -55°C to 150°C and has a power dissipation of 1W. The component is RoHS compliant and supplied in an ammo pack.
Frequency120MHz
PackageTO-92
Current Rating2A
MountingThrough Hole
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Technical Specifications
Onsemi KSC2328AYTA technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
2V
Current Rating
2A
Emitter Base Voltage (VEBO)
5V
Frequency
120MHz
Gain Bandwidth Product
120MHz
Height
8mm
hFE Min
100
Lead Free
Lead Free
Length
4.9mm
Max Breakdown Voltage
30V
Max Collector Current
2A
Max Frequency
1MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
120MHz
DC Rated Voltage
30V
Weight
0.3711027g
Width
3.9mm
Compliance
RoHS
Compliant
Datasheet
Onsemi KSC2328AYTA Datasheet
Download the complete datasheet for Onsemi KSC2328AYTA to view detailed technical specifications.
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