NPN bipolar junction transistor (BJT) in a TO-226-3 package. Features a 30V collector-emitter voltage (VCEO) and 30mA continuous collector current. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 250MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW. Lead-free and RoHS compliant.
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Onsemi KSC2669YTA technical specifications.
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 35V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 400mV |
| Continuous Collector Current | 30mA |
| Current Rating | 30mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 30mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
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