NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-226-3 package. Features a 30V collector-emitter breakdown voltage (VCEO) and a 50V collector-base breakdown voltage (VCBO). Offers a continuous collector current rating of 50mA and a maximum power dissipation of 250mW. Exhibits a transition frequency (fT) of 300MHz and a minimum hFE of 40. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
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| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 50mA |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
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