NPN Bipolar Junction Transistor (BJT) for RF applications, featuring a 1.4GHz transition frequency and 20V collector-emitter breakdown voltage. This surface mount device offers a maximum continuous collector current of 50mA and a minimum DC current gain (hFE) of 60. Operating across a temperature range of -55°C to 150°C, it is packaged in SOT-23 and supplied on tape and reel.
Frequency1.4GHz
PackageSOT-23
Current Rating50mA
MountingSurface Mount
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Technical Specifications
Onsemi KSC3123RMTF technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 20V |
| Continuous Collector Current | 50mA |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 1.4GHz |
| Gain | 23dB |
| Gain Bandwidth Product | 1.4GHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Frequency | 1.4GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 750 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| RoHS Compliant | Yes |
| Transition Frequency | 1.4GHz |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC3123RMTF Datasheet
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