NPN bipolar junction transistor (BJT) for RF applications, featuring a 20V collector-emitter breakdown voltage and a maximum operating frequency of 1.4GHz. This surface mount device offers a continuous collector current of 50mA and a minimum hFE of 120. Designed for high-frequency performance, it boasts a gain of 23dB and a transition frequency of 1.4GHz. Packaged in a TO-236-3 (SOT23-3) case, this RoHS compliant component operates from -55°C to 150°C with a power dissipation of 150mW.
Frequency1.4GHz
PackageTO-236-3
Current Rating50mA
MountingSurface Mount
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Technical Specifications
Onsemi KSC3123YMTF technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 20V |
| Collector-emitter Voltage-Max | 20V |
| Continuous Collector Current | 50mA |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 1.4GHz |
| Gain | 23dB |
| Gain Bandwidth Product | 1.4GHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Frequency | 1.4GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| RoHS Compliant | Yes |
| Transition Frequency | 1.4GHz |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC3123YMTF Datasheet
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