NPN Bipolar Junction Transistor (BJT) in a TO-126 package, designed for through-hole mounting. Features a 200V collector-emitter breakdown voltage (VCEO) and a 200V collector-base breakdown voltage (VCBO). Offers a continuous collector current rating of 100mA and a transition frequency of 150MHz. Minimum DC current gain (hFE) is 40. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.2W. This RoHS compliant component is lead-free.
Onsemi KSC3502ESTU technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 200V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Voltage (VCEO) | 200V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.2W |
| RoHS Compliant | Yes |
| Series | KSC3502 |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 200V |
| RoHS | Compliant |
No datasheet is available for this part.
