NPN Bipolar Junction Transistor (BJT) in a TO-126 package. Features a 300V Collector-Emitter Voltage (VCEO) and 300V Collector Base Voltage (VCBO). Offers a maximum collector current of 100mA and a transition frequency of 150MHz. Includes a minimum hFE of 40 and a maximum power dissipation of 7W. Designed for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C.
Frequency150MHz
PackageTO-126
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi KSC3503CS technical specifications.
General
Package/Case
TO-126
Collector Base Voltage (VCBO)
300V
Collector Emitter Breakdown Voltage
300V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
600mV
Current Rating
100mA
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
hFE Min
40
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
7W
Mount
Through Hole
Number of Elements
1
Package Quantity
250
Packaging
Bulk
Polarity
NPN
Power Dissipation
7W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
300V
Compliance
RoHS
Compliant
Datasheet
Onsemi KSC3503CS Datasheet
Download the complete datasheet for Onsemi KSC3503CS to view detailed technical specifications.
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