NPN Epitaxial Silicon Transistor designed for through-hole mounting in a TO-126-3 package. Features a 300V collector-emitter breakdown voltage and 300V collector-base voltage. Offers a maximum collector current of 100mA and a minimum hFE of 40. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 7W. This RoHS compliant component has a transition frequency of 150MHz.
PackageTO-126-3
Current Rating100mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi KSC3503DS technical specifications.
General
| Package/Case | TO-126-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7W |
| Mount | Through Hole |
| Package Quantity | 250 |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 300V |
| Weight | 0.761g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC3503DS Datasheet
Download the complete datasheet for Onsemi KSC3503DS to view detailed technical specifications.
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