NPN Epitaxial Silicon Transistor for through-hole mounting in a TO-126 package. Features a maximum collector-emitter voltage (VCEO) of 300V, a maximum collector current of 100mA, and a power dissipation of 7W. Operates across a temperature range of -55°C to 150°C with a transition frequency of 150MHz. This RoHS compliant component offers a minimum hFE of 40.
Frequency150MHz
PackageTO-126
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi KSC3503DSTU technical specifications.
General
Package/Case
TO-126
Collector Base Voltage (VCBO)
300V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
600mV
Current Rating
100mA
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
11mm
hFE Min
40
Lead Free
Lead Free
Length
8mm
Max Breakdown Voltage
300V
Max Collector Current
100mA
Max Frequency
1MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
7W
Mount
Through Hole
Number of Elements
1
Package Quantity
60
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
7W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
300V
Weight
0.761g
Width
3.25mm
Compliance
RoHS
Compliant
Datasheet
Onsemi KSC3503DSTU Datasheet
Download the complete datasheet for Onsemi KSC3503DSTU to view detailed technical specifications.
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