NPN Epitaxial Silicon Transistor for through-hole mounting in a TO-126 package. Features a maximum collector-emitter voltage (VCEO) of 300V, a maximum collector current of 100mA, and a power dissipation of 7W. Operates across a temperature range of -55°C to 150°C with a transition frequency of 150MHz. This RoHS compliant component offers a minimum hFE of 40.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi KSC3503DSTU datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi KSC3503DSTU technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 11mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 100mA |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 7W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 300V |
| Weight | 0.761g |
| Width | 3.25mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSC3503DSTU to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
