NPN Epitaxial Silicon Transistor, TO-126 package, offering a 300V Collector-Emitter Breakdown Voltage (VCEO) and 300V Collector-Base Voltage (VCBO). Features a 100mA Max Collector Current, 7W Power Dissipation, and a 150MHz Transition Frequency. Operates across a temperature range of -55°C to 150°C with a minimum hFE of 40. Through-hole mounting, lead-free, and supplied in a rail/tube package.
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| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 7W |
| Series | KSC3503 |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 300V |
| Weight | 0.761g |
| RoHS | Not Compliant |
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