ONSEMI

KSC3503ESTU

Datasheet

NPN BJT Transistor, 300V, 100mA, 150MHz, TO-126

Onsemi

KSC3503ESTU

Name: KSC3503ESTU Onsemi
Brand: Onsemi
SKU: KSC3503ESTU

NPN BJT Transistor, 300V, 100mA, 150MHz, TO-126

NPN Epitaxial Silicon Transistor, TO-126 package, offering a 300V Collector-Emitter Breakdown Voltage (VCEO) and 300V Collector-Base Voltage (VCBO). Features a 100mA Max Collector Current, 7W Power Dissipation, and a 150MHz Transition Frequency. Operates across a temperature range of -55°C to 150°C with a minimum hFE of 40. Through-hole mounting, lead-free, and supplied in a rail/tube package.

Frequency150MHz

PackageTO-126

Current Rating100mA

MountingThrough Hole

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Technical Specifications

Onsemi KSC3503ESTU technical specifications.

General

Package/Case	TO-126
Collector Base Voltage (VCBO)	300V
Collector Emitter Breakdown Voltage	300V
Collector Emitter Voltage (VCEO)	300V
Collector-emitter Voltage-Max	600mV
Current Rating	100mA
Emitter Base Voltage (VEBO)	5V
Frequency	150MHz
Gain Bandwidth Product	150MHz
hFE Min	40
Lead Free	Lead Free
Max Collector Current	100mA
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	7W
Mount	Through Hole
Number of Elements	1
Package Quantity	60
Packaging	Rail/Tube
Polarity	NPN
Power Dissipation	7W
Series	KSC3503
Transition Frequency	150MHz
DC Rated Voltage	300V
Weight	0.761g