NPN bipolar junction transistor (BJT) designed for high voltage applications. Features an 800V collector-emitter breakdown voltage and a 12A continuous collector current rating. Offers a maximum power dissipation of 150W and a transition frequency of 15MHz. Packaged in a TO-3P through-hole mount, this lead-free and RoHS compliant component operates within a temperature range of -55°C to 150°C.
Frequency15MHz
Current Rating12A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi KSC3552OTU technical specifications.
General
| Collector Base Voltage (VCBO) | 1.1kV |
| Collector Emitter Breakdown Voltage | 800V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 800V |
| Collector-emitter Voltage-Max | 2V |
| Current Rating | 12A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 15MHz |
| Gain Bandwidth Product | 15MHz |
| hFE Min | 10 |
| Lead Free | Lead Free |
| Max Collector Current | 12A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 450 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 150W |
| RoHS Compliant | Yes |
| Transition Frequency | 15MHz |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC3552OTU Datasheet
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