NPN Epitaxial Silicon Transistor, 2000-FNFLD, featuring a 2A maximum collector current and 150MHz transition frequency. This through-hole component offers a 10V collector-emitter voltage and 30V collector-base voltage. With a minimum hFE of 140 and a maximum power dissipation of 750mW, it operates within a temperature range of -55°C to 150°C. Packaged in an Ammo Pack, this RoHS compliant transistor is housed in a TO-92-3 package.
Frequency150MHz
PackageTO-92-3
Current Rating2A
MountingThrough Hole
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Technical Specifications
Onsemi KSC5019MTA technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
10V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
10V
Collector-emitter Voltage-Max
500mV
Current Rating
2A
Emitter Base Voltage (VEBO)
6V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
4.58mm
hFE Min
140
Lead Free
Lead Free
Length
4.58mm
Max Breakdown Voltage
10V
Max Collector Current
2A
Max Frequency
1MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
NPN
Power Dissipation
750mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
10V
Weight
0.24g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi KSC5019MTA Datasheet
Download the complete datasheet for Onsemi KSC5019MTA to view detailed technical specifications.
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