NPN silicon transistor in a TO-126 package, designed for through-hole mounting. Features a collector-emitter breakdown voltage of 800V and a maximum collector current of 1.5A. Offers a transition frequency of 15MHz and a maximum power dissipation of 20W. Operates across a temperature range of -55°C to 150°C, with a collector-emitter saturation voltage of 2V. This RoHS compliant component is lead-free.
Onsemi KSC5026MOS technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 1.1kV |
| Collector Emitter Breakdown Voltage | 800V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 800V |
| Collector-emitter Voltage-Max | 2V |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 15MHz |
| Gain Bandwidth Product | 15MHz |
| Height | 14.2mm |
| hFE Min | 10 |
| Lead Free | Lead Free |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 250 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 15MHz |
| DC Rated Voltage | 800V |
| Weight | 0.761g |
| RoHS | Compliant |
No datasheet is available for this part.
