NPN silicon bipolar junction transistor in a DPAK surface mount package. Features a collector-emitter breakdown voltage of 525V, collector-emitter voltage (VCEO) of 450V, and a maximum collector current of 2A. Offers a power dissipation of 50W and a transition frequency of 11MHz. Operates across a temperature range of -65°C to 150°C, is lead-free, and RoHS compliant.
Onsemi KSC5402DTF technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 1kV |
| Collector Emitter Breakdown Voltage | 525V |
| Collector Emitter Voltage (VCEO) | 450V |
| Collector-emitter Voltage-Max | 750mV |
| Emitter Base Voltage (VEBO) | 12V |
| Frequency | 11MHz |
| Gain Bandwidth Product | 11MHz |
| hFE Min | 6 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 525V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 11MHz |
| Weight | 0.26037g |
| RoHS | Compliant |
No datasheet is available for this part.
