NPN Silicon Bipolar Junction Transistor (BJT) in a TO-220-3 through-hole package. Features a 450V collector-emitter breakdown voltage and a 2A maximum collector current. Offers a 250mV collector-emitter saturation voltage and a 11MHz transition frequency. Operates within a temperature range of -65°C to 150°C with 50W power dissipation. This RoHS compliant component is supplied in a rail/tube packaging.
Onsemi KSC5402DTTU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1kV |
| Collector Emitter Breakdown Voltage | 450V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 450V |
| Collector-emitter Voltage-Max | 750mV |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 12V |
| Frequency | 11MHz |
| Gain Bandwidth Product | 11MHz |
| hFE Min | 6 |
| Lead Free | Lead Free |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 11MHz |
| DC Rated Voltage | 450V |
| Weight | 1.8g |
| RoHS | Compliant |
No datasheet is available for this part.
