NPN planar silicon transistor featuring a 600V collector-emitter breakdown voltage and 1.2kV collector-base voltage. This through-hole component offers a maximum collector current of 2A and a maximum power dissipation of 50W. It operates with a maximum frequency of 1MHz and a maximum operating temperature of 150°C, housed in a TO-220-3 package. The transistor is lead-free and RoHS compliant.
Frequency1MHz
PackageTO-220-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi KSC5502TU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1.2kV |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.5V |
| Emitter Base Voltage (VEBO) | 12V |
| Height | 9.4mm |
| hFE Min | 12 |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 2A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSC5502TU Datasheet
Download the complete datasheet for Onsemi KSC5502TU to view detailed technical specifications.
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