NPN Epitaxial Silicon Transistor for through-hole mounting in a TO-92-3 package. Features a 45V Collector-Emitter Voltage (VCEO) and a 200mA maximum collector current. Offers a transition frequency of 200MHz and a minimum hFE of 40. Operates across a wide temperature range from -55°C to 150°C with 400mW power dissipation. This RoHS compliant component is lead-free.
Onsemi KSC815YTA technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 45V |
| Weight | 0.24g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSC815YTA to view detailed technical specifications.
No datasheet is available for this part.
