NPN Epitaxial Silicon Transistor, designed for through-hole mounting in a TO-92 package. Features a maximum collector current of 150mA and a collector-emitter voltage of 50V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 300MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 250mW. This RoHS compliant component is supplied in bulk packaging.
Onsemi KSC945YBU technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 150mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 4.58mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Collector Current | 150mA |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Series | KSC945 |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 50V |
| Weight | 0.179g |
| Width | 3.86mm |
| RoHS | Compliant |
No datasheet is available for this part.
