NPN Epitaxial Silicon Transistor, 2000-FNFLD. Features 60V Collector Emitter Breakdown Voltage (VCEO) and 1A Max Collector Current. Offers a minimum DC current gain (hFE) of 135 and a transition frequency of 160MHz. Packaged in a TO-92-3 through-hole mount, this RoHS compliant component operates from -55°C to 150°C with 750mW power dissipation.
Frequency160MHz
PackageTO-92-3
Current Rating1A
MountingThrough Hole
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Technical Specifications
Onsemi KSD1616AYTA technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
120V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
300mV
Current Rating
1A
Emitter Base Voltage (VEBO)
6V
Frequency
160MHz
Gain Bandwidth Product
160MHz
Height
5.33mm
hFE Min
135
Lead Free
Lead Free
Length
5.2mm
Max Breakdown Voltage
60V
Max Collector Current
1A
Max Frequency
1MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
NPN
Power Dissipation
750mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
160MHz
DC Rated Voltage
60V
Weight
0.24g
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi KSD1616AYTA Datasheet
Download the complete datasheet for Onsemi KSD1616AYTA to view detailed technical specifications.
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