NPN Epitaxial Silicon Transistor designed for through-hole mounting in a TO-126 package. Features a maximum collector current of 5A and a collector-emitter voltage (VCEO) of 60V. Offers a minimum hFE of 100 and a low collector-emitter saturation voltage of 100mV. Operates within a temperature range of -55°C to 150°C with a power dissipation of 1.3W. This RoHS compliant component is lead-free and supplied in a rail/tube package.
PackageTO-126
Current Rating5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi KSD1691YSTU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 100mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 11mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Output Power | 1.3W |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Weight | 0.761g |
| Width | 3.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSD1691YSTU Datasheet
Download the complete datasheet for Onsemi KSD1691YSTU to view detailed technical specifications.
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