NPN Silicon Darlington Transistor for through-hole mounting in a TO-126 package. Features a 100V collector-emitter breakdown voltage and a 3A continuous collector current. Offers a minimum DC current gain (hFE) of 2000 and a maximum collector-emitter saturation voltage of 1.2V. Operates across a temperature range of -55°C to 150°C with a power dissipation of 15W. This RoHS compliant component is lead-free.
PackageTO-126
Current Rating3A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi KSD1692YS technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.2V |
| Continuous Collector Current | 3A |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 8V |
| hFE Min | 2000 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 250 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 15W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSD1692 |
| DC Rated Voltage | 100V |
| Weight | 0.761g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSD1692YS Datasheet
Download the complete datasheet for Onsemi KSD1692YS to view detailed technical specifications.
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