NPN Epitaxial Silicon Transistor for through-hole mounting in a TO-92-3 package. Features a maximum collector-emitter voltage (VCEO) of 20V and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 120 and a collector-emitter saturation voltage of 180mV. Operates within a temperature range of -55°C to 150°C with a power dissipation of 500mW. This component is lead-free and RoHS compliant.
PackageTO-92-3
Current Rating500mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi KSD261CGTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 180mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Weight | 0.24g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSD261CGTA Datasheet
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