The KSD261CYTA is a TO-92-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 20V and a collector-emitter saturation voltage of 180mV. It can handle a maximum collector current of 500mA and a maximum power dissipation of 500mW. The transistor is RoHS compliant and has a maximum operating temperature of 150°C. It is available in an ammo pack with 2000 units.
PackageTO-92-3
Current Rating500mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi KSD261CYTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 180mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSD261CYTA Datasheet
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