NPN Epitaxial Silicon Transistor, 2000-FNFLD, featuring a 1A maximum collector current and 30V collector-emitter breakdown voltage. This through-hole component offers a transition frequency of 130MHz and a minimum hFE of 120. Operating across a wide temperature range from -55°C to 150°C, it has a maximum power dissipation of 800mW. Packaged in an Ammo Pack for 2000 units, this RoHS compliant transistor is housed in a TO-92-3 package.
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| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 130MHz |
| Gain Bandwidth Product | 130MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| DC Rated Voltage | 30V |
| Weight | 0.24g |
| RoHS | Compliant |
These are design resources that include the Onsemi KSD471ACGTA
onsemi Product Discontinuance Notice PD22748XB for logic and discrete devices. Includes last time buy (Jan 2020) and ship dates (July 2020) with suggested replacements.
