NPN bipolar junction transistor (BJT) for through-hole mounting in a TO-92 package. Features a 30V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 1A. Offers a minimum DC current gain (hFE) of 120 and a transition frequency (fT) of 130MHz. Operates across a wide temperature range from -55°C to 150°C with 800mW maximum power dissipation. This RoHS compliant component is supplied in bulk packaging.
Frequency130MHz
PackageTO-92
Current Rating1A
MountingThrough Hole
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Technical Specifications
Onsemi KSD471AGBU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 130MHz |
| Gain Bandwidth Product | 130MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 800mW |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.