NPN Epitaxial Silicon Transistor, TO-92-3 package, featuring a 30V Collector-Emitter Breakdown Voltage and 1A Max Collector Current. Offers a 130MHz Transition Frequency and a minimum hFE of 120. Designed for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C with 800mW Max Power Dissipation.
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| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 130MHz |
| Gain Bandwidth Product | 130MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| DC Rated Voltage | 30V |
| Weight | 0.24g |
| RoHS | Compliant |
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onsemi Product Discontinuance Notice PD22748XB for logic and discrete devices. Includes last time buy (Jan 2020) and ship dates (July 2020) with suggested replacements.
